SiC mosfets hard switch 1,200V at up to 115A
The distributor is stocking new third-generation parts with a rugged intrinsic body diode that allows for third-quadrant operation without an additional external diode.
Applications are expected in solar energy, electric vehicle charging, uninterruptible power suppies (UPS), motor drives and energy storage.
The parts, detailed in the table below, operate at up to 1,200V and can switch 63 to 115A depending on devices.
|Current rating at 25°C||115A||100A||63A|
|Rds(on) at 25°C||16mΩ||21mΩ||32mΩ|
|Gate charge total||207nC||160nC||114nC|
|Maximum junction temperature||175˚C||175˚C||175˚C|
|Reverse-recovery charge (Qrr)||672nC||879nC||848nC|
|Reverse-recover time (Trr)||58ns||81ns||69ns|